data sheet 1 of 9 rev. 03, 2008-03-04 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! two-carrier wcdma drive-up v dd = 28 v, i dq = 900 ma, ? = 2140 mhz, 3gpp wcdma signal, 8 db p/a r, 10 mhz carrier spacing -55 -52 -49 -46 -43 -40 -37 -34 -31 -28 36 38 40 42 44 46 average output power (dbm) im3 (dbc), acpr (dbc) 0 4 8 12 16 20 24 28 32 36 drain efficiency (%) acpr efficiency im3 up PTFA211001E description the PTFA211001E is a thermally-enhanced, 100-watt, internally- matched goldmo s ? fet intended for wcdma applications. it is characaterized for single- and two-carrier wcdma operation from 2110 to 2170 mhz. thermally-enhanced packaging provides the coolest operation available. full gold metallization ensures excellent device lifetime and reliability. ptf a211001e package h- 30248-2 thermally-enhanced high power rf ldmos fet 100 w, 2110 ? 2170 mhz *see infineon distributor for future availability. rf characteristics wcdma measurements ( tested in infineon test fixture) v dd = 28 v, i dq = 900 ma, p out = 23 w average ? 1 = 2135 mhz, ? 2 = 2145 mhz, 3gpp signal, channel bandwidth = 3.84 mhz , peak/average = 8 db @ 0.01% ccdf characteristic symbol min typ max unit gain g ps 15 16 ? db drain efficiency h d 27 28.5 ? % intermodulation distortion imd ? ?37 ?36 dbc features ? thermally-enhanced package, pb-free and rohs- compliant ? broadband internal matching ? typical two-carrier wcdma performance at 2140 mhz, 28 v - average output power = 23 w - linear gain = 16 db - efficiency = 28.5% - intermodulation distortion = ?37 dbc - adjacent channel power = ?41 dbc ? typical cw performance, 2170 mhz, 28 v - output power at p?1db = 125 w - efficiency = 57% ? integrated esd protection: human body model, class 2 (minimum) ? excellent thermal stability, low hci drift ? capable of handling 10:1 vswr @ 28 v, 100 w (cw) output power
PTFA211001E data sheet 2 of 9 rev. 03, 2008-03-04 dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 a v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.08 ? w operating gate voltage v ds = 28 v, i dq = 900 ma v gs 2.0 2.5 3.0 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 200 c total device dissipation p d 417 w above 25c derate by 2.38 w/c storage temperature range t stg ?40 to +150 c thermal resistance (t case = 70c, 100 w cw) r q jc 0.42 c/w ordering information type and version package outline package description marking PTFA211001E v1 h-30248-2 thermally-enhanced slotted flange, single-ended PTFA211001E *see infineon distributor for future availability.
PTFA211001E data sheet 3 of 9 rev. 03, 2008-03-04 -55 -50 -45 -40 -35 -30 34 36 38 40 42 44 46 average output power (dbm) adjacent channel power ratio (dbm) two-carrier wcdma at various biases v dd = 28 v, ? = 2140 mhz, 3gpp wcdma signal, p/ar = 8 db, 10 mhz carrier spacing, series show i dq 900 ma 800 ma 700 ma 1.0 a typical performance (data taken in a production test fixture) broadband performance v dd = 28 v, i dq = 900 ma, p out = 44.0 dbm 10 15 20 25 30 35 2070 2090 2110 2130 2150 2170 2190 2210 frequency (mhz) gain (db), efficiency (%) -35 -30 -25 -20 -15 -10 -5 input return loss (db) gain efficiency return loss power sweep, cw conditions v dd = 28 v, i dq = 900 ma, ? = 2170 mhz 13 14 15 16 17 0 20 40 60 80 100 120 140 output power (w) gain (db) 10 20 30 40 50 60 drain efficiency (%) gain efficiency t case = 25c t case = 90c intermodulation distortion products vs. tone spacing v dd = 28 v i dq = 900 ma, ? = 2140 mhz, p out = 50 dbm pep -55 -50 -45 -40 -35 -30 -25 -20 -15 0 5 10 15 20 25 30 tone spacing (mhz) intermodulation distortion (dbc) 3rd order 5th 7th
PTFA211001E data sheet 4 of 9 rev. 03, 2008-03-04 typical performance (cont.) 2-tone drive-up v dd = 28 v, i dq = 900 ma, ? = 2140 mhz, tone spacing = 1 mhz -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 37 39 41 43 45 47 49 51 output power, pep (dbm) 0 5 10 15 20 25 30 35 40 45 50 drain efficiency (%) efficiency intermodulation distortion (dbc) im3 im7 im5 single-carrier wcdma drive-up v dd = 28 v, i dq = 900ma, ? = 2140 mhz, 3gpp wcdma signal, tm1 w/16 dpch, 67% clipping, p/a r = 8.5 db, 3.84 mhz bw -52 -48 -44 -40 -36 -32 36 37 38 39 40 41 42 43 44 45 46 average output power (dbm) 0 10 20 30 40 50 drain efficiency (%) acpr low adjacent channel power ratio (db) efficiency acpr up im3, drain efficiency and gain vs. supply voltage i dq = 900 ma, ? = 2140 mhz, tone spacing = 1 mhz, output power (pep) = 50 dbm -45 -40 -35 -30 -25 -20 -15 -10 23 24 25 26 27 28 29 30 31 32 33 supply voltage (v) 3rd order intermodulation distortion (dbc) 10 15 20 25 30 35 40 45 50 gain efficiency im3 up gain (db), drain efficiency (%) bias voltage vs. temperature voltage normalized to typical gate voltage, series show current 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 case temperature (c) normalized bias voltage 0.2 a 0.6 a 1.0 a 1.5 a 3.0 a 4.5 a 6.0 a 7.5 a 9.0 a
PTFA211001E data sheet 5 of 9 rev. 03, 2008-03-04 broadband circuit impedance z source z load g s d frequency z source w z load w mhz r jx r jx 2070 3.02 ?2.80 2.64 1.47 2110 2.96 ?2.32 2.57 1.84 2140 2.89 ?2.01 2.51 2.10 2170 2.84 ?1.66 2.44 2.34 2210 2.85 ?1.20 2.40 2.70 0.1 0.2 0 . 1 0 . 1 - w a v e l e n g t h s t o w a r d g e n e r a v e l e n g t h s t o w a r d l o a d - 0 . 0 2070 mhz 2210 mhz 2070 mhz 2210 mhz z load z source z 0 = 50 w see next page for circuit information
PTFA211001E data sheet 6 of 9 rev. 03, 2008-03-04 reference circuit reference circit schematic for ? = 2140 mhz circuit assembly information dut PTFA211001E ldmos transistor pcb 0.76 mm [.030?] thick, e r = 4.5 rogers tmm4 2 oz. copper microstrip electrical characteristics at 2140 mhz 1 dimensions: l x w (mm) dimensions: l x w (in.) l 1 0.130 l , 52.0 w 9.96 x 1.30 0.392 x 0.051 l 2 0.235 l , 52.0 w 18.01 x 1.30 0.709 x 0.051 l 3 0.191 l , 39.0 w 14.30 x 2.08 0.563 x 0.082 l 4 0.018 l , 11.5 w 1.22 x 10.03 0.048 x 0.395 l 5 0.024 l , 64.0 w 1.88 x 0.89 0.074 x 0.035 l 6 0.261 l , 64.0 w 20.32 x 0.89 0.800 x 0.035 l 7 0.073 l , 7.0 w 4.98 x 17.68 0.196 x 0.696 l 8, l 9 0.170 l , 55.0 w 13.08 x 1.17 0.515 x 0.046 l 10 0.043 l , 5.0 w 2.95 x 25.40 0.116 x 1.000 l 11 (taper) 0.059 l , 5.0 w / 17.4 w 4.01 x 25.40 / 6.17 0.158 x 1.000 / 0.243 l 12 (taper) 0.033 l , 17.4 w / 42.0 w 2.36 x 6.17 / 1.83 0.093 x 0.243 / 0.072 l 13 0.124 l , 42.0 w 9.30 x 1.83 0.366 x 0.072 l 14 0.381 l , 50.0 w 29.11 x 1.37 1.146 x 0.054 1 electrical characteristics are rounded. a211001ef_sch r3 2k v r4 2k v c3 0.001f c2 0.001f bcp56 r2 1.3k v r1 1.2k v lm7805 c1 0.001f v dd qq1 q1 r5 10 v 1f 10pf 10pf 0.02f 1.2pf 1.2pf 0.4pf 10pf 1f 0.02f l 1 l 3 l 4 l 7 l 5 l 8 l 9 l 10 10 v r9 dut c11 c12 c13 c19 c20 c9 c18 c17 c16 c15 l 11 l 12 l 6 l 13 l 2 1f c6 0.1f c5 r6 5.1k v 10 f 35v c4 5.1k v r7 0.01f c7 r8 2k v 10pf c8 c10 10pf 10f 50v 10f v dd l 14 l 15 c14 c21 50v rf_in rf_out
PTFA211001E data sheet 7 of 9 rev. 03, 2008-03-04 reference circuit assembly diagram* (not to scale) component description suggested manufacturer p/n or comment c1, c2, c3 capacitor, 0.001 f digi-key pcc1772ct-nd c4 tantalum capacitor, 10 f, 35 v digi-key pcs6106tr-nd c5 capacitor, 0.1 f digi-key pcc104bct-nd c6, c12, c16 capacitor, 1 f atc 920c105 c7 capacitor, 0.01 f digi-key 200b 103 c8, c10, c11, ceramic capacitor, 10 pf atc 100b 100 c15, c21 c9 ceramic capacitor, 0.4 pf atc 100b 0r4 c13, c17 capacitor, 0.02 f digi-key 200b203 c14, c18 tantalum capacitor, 10 f, 50 v gerrette electronics tps106k050r0400 c19, c20 ceramic capacitor, 1.2 pf atc 100b 1r2 q1 transistor infineon technologies bcp56 qq1 voltage regulator national semiconductor lm7805 r1 chip resistor 1.2 k-ohms digi-key p1.2kgct-nd r2 chip resistor 1.3 k-ohms digi-key p1.3kgct-nd r3, r8 chip resistor 2 k-ohms digi-key p2kect-nd r4 potentiometer, 2 k-ohms digi-key 3224w-202etr-nd r5, r9 chip resistor 10 ohms digi-key p10ect-nd r6, r7 chip resistor 5.1 k-ohms digi-key p5.1kect-nd reference circuit (cont.) a211001ef_assy lm 10 35v + c1 c2 r1 r2 r8 c3 r3 r4 r5 r7 rf_in c8 qq1 r6 q1 c9 c5 r9 v dd c6 c7 c4 rf_out c13 c12 c11 c10 c15 c14 v dd c18 c21 c19 c20 c16 c17 v dd a211001ef_dtl c1 c2 r1 r2 r8 c3 r3 r4 r5 r7 c8 qq1 r6 q1 c5 vdd c6 c7 c4 + lm 1 gerber files for this circuit available on our web site: www.infineon.com/rfpower
PTFA211001E data sheet 8 of 9 rev. 03, 2008-03-04 package outline specifications package h-30248-2 diagram notes: 1. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 2. all tolerances 0.127 [.005] unless specified otherwise. 3. pins: d = drain, s = source, g = gate. 4. interpret dimensions and tolerances per asme y14.5m-1994. 5. primary dimensions are mm. alternate dimensions are inches. 6. gold plating thickness: s - flange: 2.54 micron [100 microinch] (min) d, g - leads: 1.14 0.38 micron [45 15 microinch] find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower c l 34.04 [1.340] 19.810.20 [.780.008] 1.02 [.040] 19.43 0.51 [.765.020] (45 x 2.72 [.107]) 2x 12.70 [.500] 4.830.51 [.190.020] 27.94 [1.100] 4x r1.52 [r.060] 2x r1.63 [r.064] d g s flange 9.78 [.385] 0.0381 [.0015] -a- 248-cases: h-30248-2_po_9-f-08 c l c l 3.610.38 [.142.015] sph 1.57 [.062] [.370 ] +.004 ?.006 lid 9.40 +0.10 ?0.15
data sheet 9 of 9 rev. 03, 2008-03-04 PTFA211001E confidential, limited internal distribution revision history: 2008-03-04 data sheet previous version: 2005-02-04, data sheet page subjects (major changes since last revision) all remove references to alternate products. 7 correct circuit information goldmos ? is a registered trademark of infineon technologies ag. edition 2008-03-04 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2004. all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international
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